| PART |
Description |
Maker |
| TL06107 |
LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER
|
STMicroelectronics
|
| TL061CN TL061A TL061AC TL061ACN TL061AI TL061AIN T |
LOW POWER J-FET SINGLE OPERATIONAL AMPLIFIER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK2642-01MR |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
N-CHANNEL SILICON POWER MOS-FET
|
FUJI[Fuji Electric]
|
| 2SK168 2SK168E 2SK168D 2SK168F |
Silicon N Channel MOS FET
Silicon N-Channel Junction FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
TRANSISTOR|JFET|N-CHANNEL|8MA I(DSS)|TO-92
TRANSISTOR|JFET|N-CHANNEL|20MA I(DSS)|TO-92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 12mA的我（直）|2
|
Hitachi Semiconductor
Hitachi,Ltd.
|
| MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 250 VOLTS
TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| 2SK3031TENTATIVE 2SK30ATMR 2SK30ATMGR |
2SK3031 (Tentative) - N-Channel Power F-MOS FET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 300UA我（直）|92
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管|场效应| N沟道| 2.6MA我（直）|2
|
KEMET, Corp.
Electronic Theatre Controls, Inc.
|
| MTD20N03HDL MTD20N03HL 20N03HL |
HDTMOS E-FET High Density Power FET DPAK for Surface Mount
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS RDS(on) = 0.035 OHM
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| AD515AL AD515AK AD515AJ ANALOGDEVICESINC-AD515ALH |
Monolithic Precision/ Low Power FET-Input Electrometer Op Amp
38999 I II III CON 22 PIN
Monolithic Precision, Low Power FET-Input Electrometer Op Amp 单片精密低功耗FET输入运算放大器静电计
|
Analog Devices, Inc.
|
| 5962-9458507HMA 5962-9458507HMC 5962-9458506H9A 59 |
Low-Cost, Micropower, High-Side Current-Sense Amplifier Comparator Reference ICs
EEPROM EEPROM
Single/Dual/Quad, Low-Cost, UCSP/SOT23, Low-Power, Rail-to-Rail I/O Op Amps EEPROM
High-Speed, Low-Power, Single-Supply Multichannel, Video Multiplexer-Amplifiers EEPROM
Low-Cost, 3V/ 5V, 620µA, 200MHz, Single-Supply Op Amps with Rail-to-Rail Outputs EEPROM
|
Silicon Storage Technology, Inc.
Glenair, Inc.
|
| MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MAX914 MAX9140 MAX9140EUK-T MAX9140EXK-T MAX9140-M |
"40ns, Single, Low-Power SHDN & LE, 3V/ 5V, TTL Comparator"
"40ns, Single, Low-Power, 3V/5V, TTL Comparator"
"40ns, Dual, Low-Power, 3V/5V, TTL Comparator"
40ns Low-Power 3V/5V Rail-to-Rail Single-Supply Comparators
40ns, Low-Power, 3V/5V, Rail-to-Rail Single-Supply Comparators 0ns，低功耗，3V/5V，轨至轨单电源比
|
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
|
| MTP3N60E_D ON2606 ON2605 MTP3N60E MTP3N60E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 OHMS
From old datasheet system
|
ON Semiconductor
Motorola, Inc.
|
